A New Model of Negative Photoconduction

reportActive / Technical Report | Accession Number: AD0748322 | Open PDF

Abstract:

A one-deep level impurity, space-charge neutral and steady-state model is proposed and verified in n-Si samples, overcompensated but not inverted by gold acceptors. The physics is given.

Author(s):
Sah, C. T. ; Forbes, L.
Author Organization(s):
ILLINOIS UNIV AT URBANA MATERIALS RESEARCH LAB
Supplementary Note:
Sponsored in part by Air Force Office of Scientific Research. DOI: 10.21236/AD0748322
Pagination:
0012

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release, Document Partially Illegible
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited. Document Partially Illegible.

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
ARPA ORDER-603
Monitor Series:
DARPA
 Subject Terms
Joint Capability Areas:
JCA_6_Net Centric
Modernization Areas:
Directed Energy
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*CHARGE CARRIERS, DOPING, GOLD, IMPURITIES, MATHEMATICAL MODELS, PHOTOCONDUCTIVITY, SEMICONDUCTOR DIODES, SILICON
Field(s)/Group(s):
Solid State Physics
Keyword(s):
AMORPHOUS MATERIALS, AMORPHOUS MATERIALS, SEMICONDUCTORS
Report Date:
1970 Apr 30