Investigation of Silicon Carbide (SiC) Gun-Electron-Induced- Semiconductor-Hybrid-Amplifier (GEISHA) Diode Feasibility and Fabrication

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Abstract:

Single crystal alpha-SiC for GEISHA device application has been favorably evaluated. The electron carrier velocity has been measured up to 8, 200,000 cmsec on 10 to the 17th powercu cm uncompensated n-type crystals, with no indication of velocity saturation. The carrier saturation velocity is therefore expected to be above that of silicon. Measurements of the critical field have confirmed earlier work and give a value of 2 to 4 x10 to the 6th power voltscm. Schottky barrier diodes were fabricated on a variety of SiC substrates. Barrier heights were independent of the metal layer of SiC type. Schottky barriers formed on molten salt etched 10 to the 17th powercu cm n-type samples exhibited, hard reverse voltage characteristics out to true avalanche approximately equal to 84 volts reverse. Schottky barriers formed on compensated approximately equal to 5 x 10 to the 15th powercu cm n-type material sustained reverse voltages in excess of 700 volts.

Author(s):
Berman, Herbert S. ; Heng, Terence M. ; Nathanson, Harvey C.
Author Organization(s):
WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA
Descriptive Note:
Final rept. 1 Jun 1971-30 Jun 1972
Pagination:
0052

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
72-9F6-GESIC-R1
Contract/Grant Number(s):
N00014-71-C-0405
Task Number(s):
112
Project Number(s):
NR-243-001, RR008-02-03
Monitor Series:
ONR
 Subject Terms
Joint Capability Areas:
JCA_8.2.4_Leverage Capacities and Capabilities of Security Establishments; JCA_8.2_Shape; JCA_8_Building Partnerships; JCA_3_Force Application; JCA_6.1.3_Switching and Routing; JCA_6_Net Centric; JCA_1_Force Support; JCA_3.2_Engagement; JCA_3.2.1_Kinetic Means; JCA_6.1_Information Transport
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*SEMICONDUCTOR DIODES, *MICROWAVE AMPLIFIERS, MANUFACTURING, FEASIBILITY STUDIES, SILICON CARBIDES
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
SCHOTTKY BARRIER DEVICES, SEMICONDUCTOR DIODES, GEISHA DIODES
Report Date:
1972 Jun 30