Determination of Diffusion Coefficients in Silicon and Accepted Values.

The major emphasis of this review is directed towards a critical evaluation of experimentally determined diffusion coefficients of substitutional elements in silicon. A generalized definition of atomic migration is developed using the Onsager-Fuoss phenomenological approach and the conditions which must be satisfied when using Ficks first and second laws discussed. Various diffusion mechanisms are considered to illustrate possible interactions between crystal properties and atomic migration with special attention given to the effect of heavy doping and induced space-charge regions on diffusion. The effect of short-range solute-enhanced migration is also considered in discussing the effect of heavy doping on self-diffusion in silicon. The techniques commonly employed to determine atomic movement in silicon are presented. Author