Optically Controlled PMOS (P- Metal Oxide Semiconductors) Circuits.

reportActive / Technical Report | Accession Number: AD0743949 | Need Help?

Abstract:

Design and experimental data are presented on the operation of basic cells for optically modifiable PMOS logic arrays and for three different types of optically loadable PMOS memory cells. The experimental data obtained in the study of the operation of the optically modifiable logic cells and the symmetrical, optically loadable, memory cell having only one photodiode showed that, for reliable detection, the optical signal required corresponds to a photogenerated charge in the range of 1 to 5 pC. However, a balanced, or symmetrical, digital light sensor can be more sensitive by two orders of magnitude, requiring detected charge signal of 0.05 to 0.01 pC. Experimental data are presented on the operation of asynchronous PMOS photosensors applicable to detection of continuous optical signals that employ charge-pumping for biasing of the photodiodes. Author

Author(s):
Kosonocky, Walter F.
Author Organization(s):
RCA LABS PRINCETON N J
Descriptive Note:
Final scientific rept. 1 Jan 68-29 Feb 72,
Pagination:
0050

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PRRL-72-CR-14, AFCRL-72-0248
Contract/Grant Number(s):
F19628-69-C-0128
Task Number(s):
464104
Project Number(s):
AF-4641
Monitor Series:
72-0248
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
(*LOGIC CIRCUITS, PHOTODIODES), (*DATA STORAGE SYSTEMS, FEASIBILITY STUDIES), INTEGRATED CIRCUITS, FIELD EFFECT TRANSISTORS, MANUFACTURING, OPTICAL PROPERTIES, ELECTRICAL PROPERTIES
Field(s)/Group(s):
Electrical and Electronic Equipment, Computer Hardware
Keyword(s):
METAL OXIDE SEMICONDUCTORS, SEMICONDUCTOR COMPUTER STORAGE
Report Date:
1972 Mar 01