Piezoelectric-Piezoresistive Coupled Strain Transducer.

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Abstract:

The study explores the possibility of using a complementary coupling of the piezoresistive and piezoelectric effects to produce a very sensitive strain transducer. The piezoresistive effect of Si is combined with the piezoelectric effect of a ZnO thin-film in a new type of strain sensor, called the PZER. The polarization field of the ZnO activation layer changes the carrier density in the piezoresistive element. The PZER has up to 280 of the strain sensitivity of a normal piezoresistive strain transducer. The theory, fabrication, and evaluation of the PZERs is thoroughly discussed. Author

Author(s):
Cline, Gerald L.
Author Organization(s):
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
Descriptive Note:
Master's thesis,
Pagination:
0105

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
GE/EE/72-8
Project Number(s):
AF-681E
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*STRAIN GAGES, *PIEZOELECTRIC TRANSDUCERS), SILICON, ZINC COMPOUNDS, OXIDES, METAL FILMS, PIEZOELECTRIC EFFECT, MANUFACTURING, SPUTTERING, DEPOSITION, TEST METHODS, THESES
Field(s)/Group(s):
Test Facilities, Equipment and Methods
Keyword(s):
ZINC OXIDES
Report Date:
1972 Mar 01