Application of CV Characteristics to Controlling MIS Processing.

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Abstract:

The purpose of this report is to determine the usefulness of the capacitance-voltage CV method as a process control tool. To accomplish this task a study of the physics of MIS structures and the theory of the CV method are given. Then it is shown how the method can be used to obtain various physical properties of the semiconductor, insulator, and semiconductor-insulator interface. A computer program which facilitates the determination of various properties from the CV characteristic is included. The substrate material used is n-type silicon and the kinds of insulators investigated in this study are Si3N4SiO2, Al2O3SiO2, and SiO2. Author

Author(s):
Fritschie, Robert A.
Author Organization(s):
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
Descriptive Note:
Master's thesis,
Pagination:
0079

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
GE/EE/72-12
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*SEMICONDUCTORS, QUALITY CONTROL, CAPACITORS, TRANSISTORS, SILICON COMPOUNDS, NONDESTRUCTIVE TESTING, IMPURITIES, COMPUTER PROGRAMS, ELECTRICAL CONDUCTIVITY, THESES, SILICON DIOXIDE, ALUMINATES, NITRIDES
Field(s)/Group(s):
Electrical and Electronic Equipment, Manufacturing and Industrial Engineering and Control of Production Systems, Solid State Physics
Keyword(s):
METAL INSULATOR SEMICONDUCTORS, PROCESS CONTROL, SILICON NITRIDES, FORTRAN
Report Date:
1972 Mar 01