Band Structure and Electrical Properties of Amorphous Semiconductors

reportActive / Technical Report | Accession Number: AD0740838 | Open PDF

Abstract:

Threshold switching in thin-film devices Crystalline and amorphous silicon-tellurium alloys Theoretical studies of amorphous semiconductors EPR measurements on amorphous solids.

Author(s):
Adler, David
Author Organization(s):
MASSACHUSETTS INST OF TECH CAMBRIDGE
Descriptive Note:
Semi-annual technical rept. no. 3, 1 Jul-31 Dec 1971
Supplementary Note:
See also AD730467.
Pagination:
0010

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AROD-9181.13-P
Contract/Grant Number(s):
DAHC04-70-C-0048, ARPA ORDER-1562
Project Number(s):
ARPA-0D10
Monitor Series:
9181.13-P, AROD
 Subject Terms
Joint Capability Areas:
JCA_6.1.3_Switching and Routing; JCA_6_Net Centric; JCA_6.1_Information Transport; JCA_6.3.3_Spectrum Management
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*SEMICONDUCTORS, THERMAL PROPERTIES, ANNEALING, TELLURIDES, PHOSPHIDES, SEMICONDUCTING FILMS, ELECTRIC SWITCHES, GERMANIUM COMPOUNDS, PARAMAGNETIC RESONANCE, SILICON COMPOUNDS, BAND THEORY OF SOLIDS, ARSENIDES, ELECTRICAL PROPERTIES, SUPERCONDUCTORS
Field(s)/Group(s):
Solid State Physics
Keyword(s):
*AMORPHOUS MATERIALS, *SEMICONDUCTORS, AMORPHOUS MATERIALS, SILICON TELLURIDES, THIN FILMS
Report Date:
1971 Dec 31