Field-Effect Transistor RF Power Amplifiers.

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Abstract:

The report documents the results of a series of tests devised to evaluate state-of-the-art field-effect transistors FETs as RF power amplifiers. Power output, gain and efficiency are studied special attention is given to reliability and intermodulation distortion IMD evaluation. Conclusions drawn from the data indicate that integration of FETs in their present form into RF power amplifier designs is not feasible. Recommendations are made to modify present device designs to remove operational restrictions. Author

Author(s):
Ringel, Martin
Author Organization(s):
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
Descriptive Note:
Research and development technical rept.,
Pagination:
0041

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ECOM-3447
Task Number(s):
1H662705A05601
Project Number(s):
DA-1-H-662705-A-056
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
(*POWER AMPLIFIERS, *FIELD EFFECT TRANSISTORS), (*TRANSISTOR AMPLIFIERS, POWER AMPLIFIERS), RADIOFREQUENCY POWER, RELIABILITY(ELECTRONICS), BROADBAND
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
METAL OXIDE TRANSISTORS, JUNCTION TRANSISTORS
Report Date:
1971 Jul 01