Electronic States and Transport in Highly Doped Semiconductors.

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Abstract:

The resistivity and the Hall coefficient in doped semiconductors are calculated using the Green function method for high impurity concentration at temperatures near zero. The results are compared with the experimental results. Through this comparison, the effects of localized states in the impurity band to the resistivity and the Hall coefficient are investigated. Author

Author(s):
Nakai, Shinzo ; Klawiter, Waldemar F. ; Bhattacharyya, Mohit
Author Organization(s):
WYOMING UNIV LARAMIE DEPT OF PHYSICS
Descriptive Note:
Summary progress rept. 1 Dec 70-31 Aug 71,
Pagination:
0042

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
06B891
Contract/Grant Number(s):
N00014-67-A-0266-0001
Project Number(s):
NR-017-650
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*SEMICONDUCTORS, ELECTRICAL CONDUCTIVITY, BAND THEORY OF SOLIDS, HALL EFFECT, DOPING, IMPURITIES, ANTIMONY, GERMANIUM
Field(s)/Group(s):
Solid State Physics
Keyword(s):
SEMICONDUCTOR DOPING
Report Date:
1971 Sep 01