Gallium Arsenide Microwave Diodes.

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Abstract:

Epitaxial Gallium Arsenide grown in a vapor phase, hydrogen, gallium, arsenic trichloride H2-Ga-AsCl3 system has been produced in two separate reactors, each representing a different design approach. System No. 1 is a more conventional reactor with a bypass and stopcock controlled gas flow. Epi material has been reproducibly grown in this system. The resulting n on n epi layers have been made into Schottky barrier avalanche transit time diodes, and then evaluated for microwave performance. System No. 2 employs some novel design approaches which should ultimately lead to high purity material. A third system using argon as a carrier gas was set up, but no growth could be obtained with it. It was concluded that oxygen present in the argon produced gallium boat and that this precluded successful growth. Author

Author(s):
Hanoka, J. I.
Author Organization(s):
RAYTHEON CO WALTHAM MASS SPECIAL MICROWAVE DEVICES OPERATION
Descriptive Note:
Final rept. 1 Jun 69-1 Jun 70,
Pagination:
0044

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
SM-231, Micro State-0970-296
Contract/Grant Number(s):
DAAB07-69-C-0325
Task Number(s):
1H662705A05604
Project Number(s):
DA-1-H-662705-A-056
Monitor Series:
0325-F
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*SEMICONDUCTOR DIODES, *GALLIUM ARSENIDES, *EPITAXIAL GROWTH, MANUFACTURING, POLISHES, ETCHING, MICROWAVE EQUIPMENT, X BAND, K BAND
Field(s)/Group(s):
Electrical and Electronic Equipment, Manufacturing and Industrial Engineering and Control of Production Systems, Crystallography
Keyword(s):
CHEMICAL VAPOR DEPOSITION, IMPATT DIODES
Report Date:
1971 Jul 01