Characterization of Bulk Semiconductors from the Measurement of Their Transport Properties.

Transport coefficients govern the behavior of bulk semiconductors under applied electric and magnetic fields. The measurement of these coefficients as a function of temperature reveals much information about the particular semiconductor. In this memorandum the author develops the necessary theory for the analysis of isotropic semiconductors and describes a system for the measurement of these coefficients over a wide temperature range from cryogenic to room temperatures. The system contains various novel features including a precise, stable sample holder and provisions for achieving rapid temperature stabilization. The system is then applied to the characterization of a sample of InSb. Author