Memory Device,

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Abstract:

The memory has a very short transmission time for data from ferrite store to thin magnetic film store because the former is segmented into a number of zones. The cores of each zone are threaded on zone selector wires. Like cores and all zones of store are linked by common wire and to the corresponding elements of thin-film store. Author

Author(s):
Feldman, B. Ya.
Author Organization(s):
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Supplementary Note:
Edited trans. of Patent (USSR) 219 629 p1-2, 10 May 62, by M. Olaechea.
Annotation:
Memory Device--Translation.
Pagination:
0006

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
FTD-HT-23-496-70
Task Number(s):
DIAT680502
Project Number(s):
FTD-6050205
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*MEMORY DEVICES, DESIGN), THIN FILM STORAGE DEVICES, DATA STORAGE SYSTEMS, INTERFACES, CORE STORAGE, MAGNETIC CORES, DIGITAL COMPUTERS, DATA TRANSMISSION SYSTEMS, EFFICIENCY, RELIABILITY(ELECTRONICS), PATENTS, USSR
Field(s)/Group(s):
Computer Hardware
Keyword(s):
MAGNETIC FILMS, THIN FILMS, TRANSLATIONS
Report Date:
1970 Sep 21