Investigations as to the Noise Characteristics of GaAs Avalanche Transit Time Diode Oscillators.

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Abstract:

Gallium arsenide p-n junction avalanche transit time oscillators were characterized with respect to noise performance. The results of these measurements were compared to other p-n junction oscillators, Read diodes, and Gunn diodes. Measurements include receiver noise, using these devices as local oscillators for both balanced and single-ended mixer configurations AM noise sideband-to-carrier ratios FM noise sideband-to-carrier ratios, and AM and FM noise sideband-to-carrier ratios with cavity locking thermal noise as a function of reverse bias current and amplifier noise figure. In general, the GaAs devices were superior in all respects to the Si- p-n and Si-Read structures. It also exhibited better FM noise than the Gunn oscillator and only slightly worse AM noise. Author

Author(s):
Baranowski, Joseph J. ; Higgins, Vincent J.
Author Organization(s):
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
Descriptive Note:
Research and development technical rept.,
Pagination:
0017

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ECOM-3353
Task Number(s):
1H662705A05604
Project Number(s):
DA-1-H-662705-A-056
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*AVALANCHE DIODES, NOISE(RADIO)), (*GALLIUM ARSENIDES, AVALANCHE DIODES), MICROWAVE OSCILLATORS
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
AVALANCHE TRANSIT TIME DIODES
Report Date:
1970 Nov 01