STRUCTURAL MODEL FOR AMORPHOUS SILICON AND GERMANIUM.

reportActive / Technical Report | Accession Number: AD0707772 | Need Help?

Abstract:

A model for amorphous germanium and silicon has been constructed using the random network concept. Each atom has a first coordination number of four, and only a small variation in the nearest neighbor distance is allowed. Non-crystallinity is due to variations in the tetrahedral bond angle and rotations about bonds. No difficulty was encountered in continuing to make the model larger and no difference between the central and outer regions could be observed. The radial distribution function and the density of the model agree well with recent measurements. Author

Author(s):
Polk, D. E.
Author Organization(s):
HARVARD UNIV CAMBRIDGE MASS DIV OF ENGINEERING AND APPLIED PHYSICS
Descriptive Note:
Technical rept.,
Pagination:
0024

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TR-29
Contract/Grant Number(s):
N00014-67-A-0298-0009
Project Number(s):
NR-032-485
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*SEMICONDUCTING FILMS, ELECTRICAL PROPERTIES), (*SOLID SOLUTIONS, CRYSTAL STRUCTURE), SILICON, GERMANIUM, CHEMICAL BONDS, X RAY DIFFRACTION
Field(s)/Group(s):
Crystallography, Solid State Physics
Keyword(s):
AMORPHOUS MATERIALS, AMORPHOUS MATERIALS, SEMICONDUCTORS
Report Date:
1970 May 01