EPITAXIAL GROWTH OF Al2O3 ON SAPPHIRE AND RUBY SUBSTRATES BY CHEMICAL VAPOR DEPOSITION,

Wong, Philip; Messier, Donald R.

EPITAXIAL GROWTH OF Al2O3 ON SAPPHIRE AND RUBY SUBSTRATES BY CHEMICAL VAPOR DEPOSITION,

Active / Technical Report | Accession Number: AD0707378 |

Abstract:

The growth of Al2O3 on single crystal sapphire and ruby substrates via the net chemical reaction 2 AlCl3g 3 H2Og Al2O3s 6 HClg, was investigated in the temperature range from 1400 to 1600C. Deposits that were obtained varied from polycrystalline at lower temperatures to single crystal at the higher ones. Use of a 60 deg. oriented substrate resulted in a better quality, faster growing deposit than did use of 0 deg. and 90 deg. oriented substrates. Authors

Author(s):

Wong, Philip ; Messier, Donald R.

Author Organization(s):

ARMY MATERIALS AND MECHANICS RESEARCH CENTER WATERTOWN MASS

Pagination:

0015

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:

Approved For Public Release

RECORD

Collection: TR

Identifying Numbers

Report Number(s):

AMMRC-TR-70-3

Project Number(s):

DA-1-T-062105-A-330

Subject Terms

Communities of Interest:

No COI(s) Identified

Descriptor(s):

*ALUMINATES, *EPITAXIAL GROWTH, *ARMOR, CRYSTAL GROWTH, SINGLE CRYSTALS, DEPOSITION

Field(s)/Group(s):

Ceramics, Refractories and Glass, Manufacturing and Industrial Engineering and Control of Production Systems, Armor

Keyword(s):

*CHEMICALS, *VAPOR DEPOSITION, *VAPOR DEPOSITION

Report Date:

1970 Feb 01