Si - ZnS HETEROJUNCTIONS. II. SINGLE CRYSTAL FILMS OF ZINC SULPHIDE ON SILICON,

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Abstract:

A technique for the growth of single-crystal epitaxial films of zinc sulphide on silicon has been evolved. The film is grown by condensation of vapour sublimed from a zinc sulphide source in ultra-high vacuum. Optical, electron and scanning electron microscopy are used to examine the topography of the films produced, and X-ray and electron diffraction studies are used to evaluate the crystal structure of the deposits and substrates. Author

Author(s):
Hill, J. S. ; Rawlins, T. G. R. ; Simpson, G. N.
Author Organization(s):
SIGNALS RESEARCH AND DEVELOPMENT ESTABLISHMENT CHRISTCHURCH (ENGLAND)
Pagination:
0041

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
SRDE-69049, TRC-BR-18681
Monitor Series:
BR-18681
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*SEMICONDUCTING FILMS, *ZINC SULFIDES, *EPITAXIAL GROWTH, VAPOR PLATING, SINGLE CRYSTALS, SILICON, ELECTRON DIFFRACTION, X RAY DIFFRACTION, UNITED KINGDOM
Field(s)/Group(s):
Crystallography
Keyword(s):
SEMICONDUCTOR JUNCTIONS, HETEROJUNCTIONS
Report Date:
1970 Jan 01