CRYSTAL PROPERTIES AS INFLUENCED BY CRYSTALLOGRAPHIC IMPERFECTIONS.
Abstract:
The report consists of two parts. Part 1 reviews material problems related to semiconductor device technology. It is shown that certain crystal defects can be more important in determining device yield, device performance, and device reliability than the material parameters normally specified. Process-induced defects, their influence on device yield, and their elimination through changes in process technology are also discussed. Part 2 discusses a new approach to x-ray topography, based on automated Bragg angle control ABAC. ABAC maintains the operation of the topographic system at all times at the maximum x-ray intensity for exposing the photographic plate. Using numerical Fourier techniques, a control scheme is developed that maintains the x-ray system at all times at the peak of the rocking curve Ibeta. The mathematical control scheme is implemented through an angular derivative generator capable of generating the signal dIdbeta on a continuous basis. Complete design details of a feedback control unit are given. Internal adjustment, calibration procedures, and detailed directions for the use of the system are also provided. Author