PREPARATION OF Cu2S FILM SINGLE CRYSTALS,

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Abstract:

The compound Cu2S was synthesized by melting components in a stoichiometric ratio. Electronographic and X-ray diffraction analysis show that the obtained compound is a low-temperature modification of Cu2S with a rhombic lattice. The compound has p-type conductivity. The concentration of free carriers comprises 8.5 x 10 to the -19th cu cm, the resistivity is 0.07 ohm.cm, and the thermal emf is 86 micron Vdeg. Polycrystal and single-crystal films 250 A thick were obtained from this substance by the epitaxial method. Author

Author(s):
Aliyarova, Z. A. ; Zamanova, E. N.
Author Organization(s):
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Supplementary Note:
Edited trans. from Akademiya Nauk Azerbaidzhanskoi SSR, Baku. Institut Fizika. Trudy, p119-121 1966, by D. Koolbeck.
Annotation:
Preparation of Cu2S film single crystals--Translation.
Pagination:
0006

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
FTD-HT-23-369-69
Project Number(s):
FTD-7230178
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*SEMICONDUCTING FILMS, COPPER COMPOUNDS), (*COPPER COMPOUNDS, *EPITAXIAL GROWTH), CRYSTAL STRUCTURE, SULFIDES, FILMS, USSR
Field(s)/Group(s):
Crystallography, Solid State Physics
Keyword(s):
TRANSLATIONS, *COPPER SULFIDES
Report Date:
1969 Sep 18