SCHOTTKY-BARRIER TRANSISTOR.

The purpose of the work was to design and realize Schottky-barrier field-effect transistors with high channel doping. In the first chapter the microwave properties of the transistors are reported and the measurement techniques are described. The second chapter treats the investigation of the breakdown voltage of the Schottky contact on Si. Transistors realized by another technology using gold instead of Cr-Ni Schottky barriers have shown a higher breakdown voltage. This technology is described in the third chapter. Channels with high doping have small breakdown voltages therefore very thin channel thicknesses have to be used. For such thin channels the carrier concentration cannot be considered to be constant due to the fact that the thickness of the channel is comparable with the Debye length and also the donor concentration is not constant. This investigation is described in the fourth chapter. The fifth chapter describes the work performed on the GaAs transistors. Author