EPITAXIAL GROWTH MECHANISMS IN VACUUM DEPOSITED THIN FILMS.

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Abstract:

The mechanisms which lead to oriented overgrowth have been investigated with a view towards experimental and theoretical development of suitable models for nucleation and growth phenomena. Particular emphasis was placed on the role of common epitaxial features occurring independently of experimental conditions. Such features included the parallel alignment of close-packed rows of deposit atoms with 110 directions in the substrate, long-range epitaxial effects and crystallite size distributions characteristic of the various growth stages. Author

Author(s):
Gerdes, R. J. ; Young, R. A.
Author Organization(s):
GEORGIA INST OF TECH ATLANTA ENGINEERING EXPERIMENT STATION
Descriptive Note:
Final rept. 1 Aug 62-31 Jul 68,
Pagination:
0014

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
GIT-A-644-F
Contract/Grant Number(s):
Nonr-991(09)
Project Number(s):
NR-036-052
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*METAL FILMS, *EPITAXIAL GROWTH), VAPOR PLATING, VACUUM APPARATUS, NUCLEATION, SUBSTRATES, TWINNING(CRYSTALLOGRAPHY), ELECTRON DIFFRACTION, ELECTRON MICROSCOPY, STRAIN(MECHANICS), X RAY DIFFRACTION, SILVER, GOLD, COPPER
Field(s)/Group(s):
Crystallography
Keyword(s):
THIN FILMS, VACUUM DEPOSITION
Report Date:
1969 May 30