ACADEMY OF SCIENCES OF THE UKRAINIAN SSR. PHYSICO-TECHNOLOGICAL INSTITUTE. PHYSICAL PROPERTIES OF ESPECIALLY PURE METALS AND SEMICONDUCTORS (SELECTED ARTICLES),

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Abstract:

Contents Growing of single crystals of silicon carbide of cubic modification Influence of annealing of silicon in antimony vapor on the density of linear dislocations.

Author(s):
Saidov, M. S. ; Shamuratov, Kh. A. ; Shukurov, I.
Author Organization(s):
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Supplementary Note:
Edited trans. mono. of Fizicheskie Svoistva Osobo Chistykh Metallov i Poluprovodnikov, Tashkent, 1966 p13-17, 39-41, by E. Harter.
Annotation:
Academy of sciences of the Ukrainian SSR. Physico-technological institute. Physical properties of especially pure metals and semiconductors (selected articles)--Translation.
Pagination:
0015

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
FTD-HT-23-407-68
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*SILICON CARBIDES, CRYSTAL GROWTH), (*SILICON, DISLOCATIONS), SINGLE CRYSTALS, ELECTRICAL PROPERTIES, SEMICONDUCTOR DIODES, ANNEALING, IMPURITIES, USSR
Field(s)/Group(s):
Crystallography, Solid State Physics
Keyword(s):
TRANSLATIONS
Report Date:
1968 Jul 30