INVESTIGATION OF RADIATION HARDENED CIRCUIT ELEMENTS.

The report concerns an investigation of radiation hardened circuit elements. Completed at this time is the theoretical and experimental investigation of silicon dioxide insulated gate field effect transistors. Preliminary efforts indicate a new design for hardened junction field effect transistors. A very thin, dielectric isolation bounded volume of single crystal silicon is used in constructing both field effect devices. Radiation tests of the insulated gate devices were performed with a neodymium-doped glass laser, a linac beam of electrons and a flash X-ray facility, with emphasis on the transient radiation effects. The radiation produced peak photo currents of the bounded volume metal-oxide-semiconductor BVM devices were at least an order of magnitude smaller than those of the conventional metal-oxide-semiconductor MOS devices. Threshold voltage shifts with dose level were similar in both device types. Oxidation techniques have been developed for device processing that yield no inversionenhancement layers in the covered substrates of complementary structures. Author