INDIUM ARSENIDE-PHOSPHIDE INJECTION LASERS.

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Abstract:

Studies are being made of the alloy system indium arsenide-phosphide InAs-InP to produce injection lasers which emit at 1.06 microns at room temperature. Ingots of InAs-InP were grown using both the Czochralski magnetic puller and a modified Czochralski technique in which the crystal is pulled from a melt encapsulated in boron oxide glass. Both methods show promising results, and crystals of InAs-InP were produced which have made possible the postulation of a revised phase diagram for the system. Both lattice parameters and electron carrier concentration and mobility data were obtained for the materials produced. Author

Author(s):
Willardson, Robert K. ; Winkler, James H. ; Ross, Bernd
Author Organization(s):
BELL AND HOWELL RESEARCH LABS PASADENA CALIF
Descriptive Note:
Technical summary rept. no. 1,
Pagination:
0056

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-68-C-0219
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*LASERS, INDIUM COMPOUNDS, ARSENIDES, PHOSPHIDES, SOLID SOLUTIONS, EMISSIVITY, INFRARED RADIATION, CRYSTAL GROWTH, PHASE STUDIES, CRYSTAL LATTICES, CHARGE CARRIERS
Field(s)/Group(s):
Lasers and Masers, Solid State Physics
Keyword(s):
INDIUM PHOSPHIDE, INDIUM ARSENIDE, *SEMICONDUCTOR LASERS
Report Date:
1968 Mar 01