ACCOMMODATION OF LATTICE MISMATCH AT HETEROJUNCTIONS.

reportActive / Technical Report | Accession Number: AD0672555 | Need Help?

Abstract:

The accommodation of lattice mismatch at heterojunctions grown by back-melting and subsequent regrowth was investigated employing the InSb-GaSb system. Single crystals of either GaSb or InSb served as the one component substrate of the heterojunctions and the regrown part was an alloy of the general formula GaxIn1-xSb. The lattice mismatch at the heterojunction was varied by varying the composition of the regrown alloy. It was found that the accommodation of the lattice mismatch takes place by the generation of dislocations the number of which is consistent with a simple linear lattice model. Author

Author(s):
Mroczkowski, R. S. ; Witt, A. F. ; Gatos, H. C.
Author Organization(s):
MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF METALLURGY AND MATERIALS SCIENCE
Descriptive Note:
Technical rept.,
Pagination:
0018

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TR-12
Contract/Grant Number(s):
Nonr-3963(05)
Project Number(s):
NR-032-482
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*SEMICONDUCTING FILMS, CRYSTAL DEFECTS), GALLIUM ALLOYS, INDIUM ALLOYS, ANTIMONY ALLOYS, DISLOCATIONS, DENSITY, PURIFICATION, MELTING, PHOTOMICROGRAPHY
Field(s)/Group(s):
Crystallography, Solid State Physics
Keyword(s):
HETEROJUNCTIONS
Report Date:
1968 Jul 01