HETEROJUNCTION DEVICES.

Sections I and II describe work done during the past year on the GaAs GaP heterojunction system. An open tube epitaxy system with HCl as a carrier gas was used to deposit GaAs upon GaP. From the deposits n-n, n-p and p-n GaAs-GaP heterojunctions were constructed. The electrical and optical properties were studied to determine the energy band profiles and approximate models for the current carrying mechanisms. Section III covers experimental work which was carried out on n-p Si-GaP heterojunctions to demonstrate explicitly the existence of inversion layers and study the feasibility of a field effect device. Section IV summarizes the work done over the whole three year contract span. Author