ELECTRONIC CONFIGURATION OF INDIUM ANTIMONIDE SURFACES.

Large signal alternating current field effect experiments on surfaces of n and p-type InSb yielded results which were found to be consistent with a model according to which the discrete fast states near the valence and conduction band edges are acceptor-like, characteristic of the antimony and indium species, respectively. This model was extended to emphasize the importance of sub-surface states. The electrical properties of these surfaces was correlated with their chemical and structural characteristics and was found to be consistent with the Gatos-Lavine model of the dangling bonds on the III-V compound surfaces.