MICROWAVE TRANSISTOR INTERMEDIATE-FREQUENCY AMPLIFIER (2 GHZ).

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Abstract:

A method of designing microstrip amplifiers is presented. Transmission line measurements for the transistors are converted to obtain the Z, Y, h, etc., parameters, and maximum available gain at the frequency of interest is then determined. Coupling networks are computed in the form of simple series L- and C-type structures, and width over height Wh as a function of frequency is determined. Using these techniques, the fabrication of two amplifiers is described and their performance data are shown. Author

Author(s):
Gelnovatch, Vladimir ; Chase, Ivan L. ; Burke, Thomas F.
Author Organization(s):
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
Descriptive Note:
Technical rept.,
Pagination:
0027

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ECOM-2853
Task Number(s):
1L013001A91A38
Project Number(s):
DA-1L013001A91A
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*TRANSISTOR AMPLIFIERS, MICROWAVE FREQUENCY), MICROWAVE EQUIPMENT, INTERMEDIATE FREQUENCY AMPLIFIERS, DISTRIBUTED AMPLIFIERS, TRANSMISSION LINES, CERAMIC MATERIALS, SUBSTRATES, COUPLING CIRCUITS, GAIN
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
1967 Jul 01