INTEGRATED SILICON DEVICE TECHNOLOGY. VOLUME XIII. INTRACONNECTIONS AND ISOLATION.

The volume discusses methods of coupling and decoupling elements on a silicon block according to a conventional schematic diagram. The conducting paths in an integrated circuit can be realized by a variety of methods such as bulk paths, diffused channels, jumper wires, mixed conducting slurries or deposited metals. The latter is by far the most important. Such deposited metals are usually adequate for making ohmic contacts to silicon as well. Isolation of elements in an integrated circuit is also accomplished by a variety of methods, the most effective of which are the various dielectric isolation methods. Dielectrics used include silicon oxide, silicon nitride, silicon carbide and air. Other techniques, relying on reverse biased junctions and bulk resistances, are adequate for many applications and are easier to fabricate. Reverse biased junctions are the most common isolation method employed in production-type integrated circuits. Author