SINGLE CRYSTAL CADMIUM SULFIDE AND CADMIUM SELENIDE INSULATED-GATE FIELD-EFFECT TRIODES.

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Abstract:

Insulated-gate field-effect triodes were fabricated on single crystal cadmium sulfide and cadmium selenide. Both bulk crystals and platelets were used for single crystal samples. Chromium and aluminum were found to make low impedance contacts to cadmium sulfide and cadmium selenide. The calculated effective drift mobilities of the fabricated single crystal IGFETs were three to four times greater than the highest reported value of polycrystalline cadmium sulfide and cadmium selenide IGFETs. The characteristics of the fabricated devices were unstable with respect to time and temperature. This instability was partially attributed to the instability of the evaporated silicon monoxide layer. Author

Author(s):
Bomber, Thomas M. ; Runyan, Kenneth R.
Author Organization(s):
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
Descriptive Note:
Master's thesis,
Pagination:
0105

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
GE/EE/67A-1
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*FIELD EFFECT TRANSISTORS, *SEMICONDUCTING FILMS, *TRIODES, *CADMIUM SELENIDES, *CADMIUM SULFIDES, GAIN, TRIODES, TRIODES, SINGLE CRYSTALS, VAPOR PLATING, MASKING, ELECTRICAL RESISTANCE, HALL EFFECT, CHARGE CARRIERS, THERMAL STABILITY, ELECTRIC CONNECTORS
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
1967 Mar 01