METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN DIGITAL CIRCUITS.

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Abstract:

The metal-oxide-semiconductor field-effect transistor Mos Fet is evaluated for use in digital circuitry. The basic building block, the digital inverter, is described and analyzed for four types of loading. The loads considered are resistor load, enhancement mode MOS Fet load, depletion mode MOS Fet load, and complementary MOS Fet Load. Characteristics such as load line characteristics, power dissipation, transfer characteristics, and transient performance are discussed and compared. Equations describing the characteristics of each circuit have been derived and verified experimentally. The results clearly indicate the superior electrical characteristics of the complementary circuits. A typical complementary MOS Flip-Flop capable of one MHz operation is illustrated. Author

Author(s):
Wagner, G. Donald
Author Organization(s):
JOHNS HOPKINS UNIV SILVER SPRING MD APPLIED PHYSICS LAB
Descriptive Note:
Technical memo.,
Pagination:
0112

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TG-875, IDEP-742.50.00.00-S6-01
Contract/Grant Number(s):
NOw-62-0604
Monitor Series:
742.50.00.00-S6-01
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
(*TRANSISTORS, DIGITAL SYSTEMS), CIRCUITS, SEMICONDUCTORS, INVERTER CIRCUITS, METALS, OXIDES
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
METAL OXIDE TRANSISTORS
Report Date:
1966 Dec 01