PRODUCTION ENGINEERING MEASURE: HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) AND HIGH SPEED SEMICONDUCTOR SWITCH (GATE).
Abstract:
The report presents the results obtained from quality control testing of the three-terminal device, the results of investigating the curing procedures for the two-terminal and 2N1765 devices, and the evaluation of wafer resistivity and thickness for optimum turn-on time of the 2N1765 device. Author
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