HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) AND HIGH SPEED SEMICONDUCTOR SWITCH (GATE).

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Abstract:

The report presents the results obtained from preproduction testing of three device types, details of circuitry considerations of turn-on time measurements, results of investigation of gate-cathode impedance of the 2N1765 device type, and evaluation of 3-terminal reliability and 2-terminal dvdt problems. Preliminary investigation of producing a device with electrical characteristics similar to the 2N1765 but housed in a 716 inch stud package was performed and the results are reported. Author

Author(s):
Burlingame, Robert
Author Organization(s):
MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
Descriptive Note:
Quarterly rept. no. 12, 28 Feb-29 May 66.
Supplementary Note:
See also AD-633 141.
Pagination:
0026

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
DA-36-039-AMC-01475(E)
 Subject Terms
Joint Capability Areas:
JCA_6.1.3_Switching and Routing
Modernization Areas:
Microelectronics
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*SEMICONDUCTOR DEVICES, MANUFACTURING), (*ELECTRONIC SWITCHES, SEMICONDUCTOR DEVICES), GATES(CIRCUITS), ELECTRICAL IMPEDANCE, RELIABILITY(ELECTRONICS), SILICON CONTROLLED RECTIFIERS
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
1966 May 29