MULTILAYER OHMIC CONTACTS ON CDS.

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Abstract:

A multilayer technique is proposed for evaporation of ohmic contacts onto CdS which does not change their electrical properties after heat treatment up to 350C. This technique consists of a sequential evaporation of a preparative layer, an active metal and possible a covering metal. The Ti preparative-A1 active-Pt cover sequence was found most successful. All of the more than forty evaporations investigated -on CdS single crystals, or on evaporated recrystallized layers- showed ohmic characteristics between 2 mV and 200 V and showed generation-recombination noise above at most 500 Hz. The electrical properties of the contacts did not markedly change after vacuum heat treatment up to 350C. Author

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