HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) AND HIGH SPEED SEMICONDUCTOR SWITCH (GATE).
Abstract:
The report presents results obtained from preproduction testing of a 2N1765 device lot, solutions to problems involving leakage current, dvdt, and turn-on time, and descriptions of work performed on life test facilities. Author
Security Markings
DOCUMENT & CONTEXTUAL SUMMARY
Distribution:
Approved For Public Release
RECORD
Collection: TR