THIN-FILM METAL-BASE TRIODES.

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Abstract:

An experimental and theoretical study of an aluminum-aluminum oxide-aluminum triode showed it to have active-device characteristics equivalent to those of two diodes back-to-back. The phenomena involved can be explained in terms of tunnel emission. The report includes a survey of the literature, and proposals for investigation of other thin-film metal-base triodes of various structures and compositions. Author

Author(s):
Evans, B. D.
Author Organization(s):
NAVY ELECTRONICS LAB SAN DIEGO CALIF
Descriptive Note:
Research rept., May-Nov 65,
Annotation:
Thin-film metal-base triodes of aluminum, aluminum oxide, and aluminum.
Pagination:
0046

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
NEL-1356
Task Number(s):
0401
Project Number(s):
SR-001-01-01
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*TRIODES, METAL FILMS), ALUMINUM, ALUMINUM COMPOUNDS, OXIDES, SEMICONDUCTOR DIODES, TUNNELING(ELECTRONICS)
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
ALUMINA, SCHOTTKY EMISSION, THIN FILMS, Most project 4
Report Date:
1966 Feb 15