HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) AND HIGH SPEED SEMICONDUCTOR SWITCH (GATE).

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Abstract:

Activities included the evaluation of a process change designed to increase dvdt capabilities, evaluation of turn-on time methods and characteristics of the two-terminal device, preparation of revised specifications for both two- and three-terminal device types, and the preparation of test procedures. Test facilities for preproduction lots were completed, and work was started on production life test equipment for the two- and three-terminal device types as well as the type 2N1765 which is being produced by Motorola as a consideration for specification and schedule revisions. Author

Author(s):
Burlingame, B. G.
Author Organization(s):
MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
Descriptive Note:
Quarterly rept. no. 10, 29 Aug-28 Nov 65,
Supplementary Note:
See also AD-619 770.
Annotation:
Production engineering measure. High speed semiconductor switch (two terminal) and high speed semiconductor switch (gate).
Pagination:
0046

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
DA-36-039-AMC-01475(E)
 Subject Terms
Joint Capability Areas:
JCA_6.1.3_Switching and Routing
Communities of Interest:
Materials and Manufacturing Processes
Descriptor(s):
(*SEMICONDUCTOR DEVICES, MANUFACTURING), (*ELECTRONIC SWITCHES, SEMICONDUCTOR DEVICES), GATES(CIRCUITS), SWITCHING CIRCUITS, GOLD, DIFFUSION, PHOSPHORUS, OXIDES, VOLTAGE, SPECIFICATIONS
Field(s)/Group(s):
Electrical and Electronic Equipment, Fabrication Metallurgy
Report Date:
1965 Nov 28