MICROWAVE TRANSISTORS.

A preliminary design study of a 3GHz and a 6 GHz lownoise transistor was made. The general approach to the development of these transistors is discussed along with calculatedo operating parameters and some of the developmental problems involved. P-type diffusion studies have been carried out under both vacuum and atmospheric pressures conditions in an attempt to obtain the desired base surface concentrations required for high frequency transistor development. It was found that surface concentrations from vacuum diffusions were not reproducible to a satisfactory degree, but those from open-tube diffusions show definite promise. Further refinements of the opentube process are planned. Circuit development work centered around the design of an S-band voltage tunable oscillator. Prototype fixed frequency designs were fabricated and tested. The results indicate the method of design and circuit realization techniques were satisfactory. The design of a prototype voltage tunable S-band oscillator on ceramic has been completed. Calculations show the circuit will be able to be fabricated in a very small enclosure approximately 300 mils on a side. Author