RELIABILITY ANALYSIS OF X-BAND TUNNEL DIODES.

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Abstract:

The report presents an account of a microwave tunnel diode improvement program, and the results obtained from reliability tests performed on devices fabricated by the improved processes. A new solid structure tunnel diode was developed during this contract which exhibits superior reliability characteristics to any previously tested tunnel diode. The process and fabrication details for this device along with reliability data are included in the report. Author

Author(s):
Davis, Charles ; Lueck, Arthur
Author Organization(s):
SYLVANIA ELECTRIC PRODUCTS INC WOBURN MASS SEMICONDUCTOR DIV
Descriptive Note:
Final technical rept.,
Supplementary Note:
See also AD-615 498.
Annotation:
Reliability analysis of x-band tunnel diodes.
Pagination:
0074

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
RADC-TR-65-291
Contract/Grant Number(s):
AF30(602)-3487
Task Number(s):
451901
Project Number(s):
AF-4519
Monitor Series:
TR-65-291
 Subject Terms
Communities of Interest:
Materials and Manufacturing Processes
Descriptor(s):
*TUNNEL DIODES, RELIABILITY(ELECTRONICS), X BAND, MANUFACTURING, PROCESSING, ENCAPSULATION, GERMANIUM ALLOYS, TIN ALLOYS, ARSENIC, GALLIUM
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
1965 Dec 01