INTEGRATED SILICON DEVICE TECHNOLOGY. VOLUME IX. EPITAXY.

The report discusses the theory, methods and practical applications of silicon epitaxy. Uniform impurity profiles, which are not practical in diffused layers, are readily obtainable by epitaxy since impurities are added to the growing layer. Epitaxial layers can be formed much faster than diffused layers but thickness control of multilayers is easier with diffusion. Techniques of epitaxy and diffusion combine to provide an improvement in integrated circuit performance not possible by diffusion alone. Models for the epitaxial growth process and a brief description of defects occurring in imperfect epitaxy are given. The methods of epitaxially depositing silicon, both vapor phase and vacuum techniques, are explained. Evaluation techniques for silicon epitaxial wafers, e. g., thickness measurements and impurity and resistivity profile determination, are presented. The application of epitaxy to device structures and the improved performance in these structures brought about by epitaxy are discussed. Author