LOW-NOISE L-BAND TRANSISTOR.

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Abstract:

A research and development program is described for a germanium microwave low-noise amplifier transistor with a noise figure goal of 3.0 db and practical gain at 1.3 Gc. Final state-of-the-art samples averaged 3.1 db noise figure and 9.4 db gain. Technology work is described and the device design is discussed. Microwave testing is discussed and test results are given. Author

Author(s):
Granberry, Doyle S. ; Petritz, Richard L. ; Webster, Roger R.
Author Organization(s):
TEXAS INSTRUMENTS INC DALLAS
Descriptive Note:
Final rept. for 15 May 64-30 Jun 65,
Annotation:
Low-noise L-band transistor.
Pagination:
0051

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TI-03-65-61
Contract/Grant Number(s):
DA28 043AMC00119E
Task Number(s):
1P622001A05604
Project Number(s):
1P6 22001A056
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*TRANSISTORS, L BAND), NOISE(RADIO), GERMANIUM, TRANSISTOR AMPLIFIERS, MICROWAVE AMPLIFIERS, GAIN, PERFORMANCE(ENGINEERING)
Report Date:
1965 Jun 30