THIN FILM TECHNIQUES FOR SILICON INTEGRATED CIRCUITS.

Phillips, C. E.; Wilson, R. W.

THIN FILM TECHNIQUES FOR SILICON INTEGRATED CIRCUITS.

Active / Technical Report | Accession Number: AD0619946 |

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Abstract:

Flash evaporation of cermet resistive materials and plasma-anodized capacitor dielectrics was investigated. A problem encountered in flash evaporation of cermet materials was interference of the electron beam and magnetic field of the deflection system with the sheetresistance monitoring circuit. Shielding the leads to the test sample and the thermocouple monitoring substrate temperature eliminated the interference. Leaks developed in the plasma-anodization system. The system has been repaired and is back in operation. Low-energy sputtering of cermet films has been investigated. Work on vapor-plated capacitor dielectrics has continued. Masks for the broadband linear amplifier circuit are now available and initial samples of the circuit are being processed. Initial samples of the thin-film logic gate are being analyzed. Author

Author(s):

Phillips, C. E. ; Wilson, R. W.

Author Organization(s):

MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV

Descriptive Note:

Quarterly progress rept. no. 3, 1 Dec 64-28 Feb 65,

Supplementary Note:

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:

Approved For Public Release

RECORD

Collection: TR

Identifying Numbers

Contract/Grant Number(s):

DA28 043AMC00097E

Task Number(s):

1P622001A05602

Project Number(s):

1P6 22001A056

Subject Terms

Modernization Areas:

Microelectronics

Communities of Interest:

Advanced Electronics

Descriptor(s):

*SEMICONDUCTING FILMS, INTEGRATED CIRCUITS, RESISTORS, CAPACITORS, SILICON, CERMETS, DIELECTRIC FILMS, VAPOR PLATING, SPUTTERING, NICKEL ALLOYS, CHROMIUM ALLOYS, TANTALUM COMPOUNDS, OXIDES, IMPURITIES, ALUMINUM COMPOUNDS, TANTALUM, TRANSISTORS, SILICIDES, GATES(CIRCUITS), AMPLIFIERS, CHEMICAL MILLING

Keyword(s):

THIN FILMS

Report Date:

1965 Feb 28