PRODUCTION ENGINEERING MEASURE. HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) AND HIGH SPEED SEMICONDUCTOR SWITCH (GATE).

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Abstract:

The report covers progress made on gold diffusion techniques, partial evaluation of the three-terminal device under simulated operating conditions, and process changes introduced to increase device reliability. Author

Author(s):
Burlingame, B. G.
Author Organization(s):
MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
Descriptive Note:
Quarterly rept. no. 8, 29 Feb-28 May 65,
Annotation:
Production engineering measure. High speed semiconductor switch (two terminal) and high speed semiconductor switch (gate).
Pagination:
0020

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
DA36 039AMC01475E
 Subject Terms
Joint Capability Areas:
JCA_6.1.3_Switching and Routing
Communities of Interest:
Materials and Manufacturing Processes
Descriptor(s):
(*SEMICONDUCTOR DEVICES, MANUFACTURING), (*ELECTRONIC SWITCHES, SEMICONDUCTOR DEVICES), GATES(CIRCUITS), SWITCHING CIRCUITS, GOLD, DIFFUSION, RELIABILITY(ELECTRONICS), ELECTRIC TERMINALS, PLATING, VOLTAGE, PERFORMANCE(ENGINEERING)
Report Date:
1965 May 28