HIGH POWER SEMICONDUCTOR TR DEVICES.

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Abstract:

Efforts have resulted in improved performance of the X sub L-Band Switch design. The improvements through electrical and mechanical changes in the switch design resulted in greater operational bandwidth and improved diode mounting. The Ku-band work on evaluation of limiter diodes has been continued. Performance data of diodes is given in this report. New Ku-band diode mounts have also been evaluated and show improvements in overall performance. Author

Author(s):
Brunton, R. H., Iii.
Author Organization(s):
MICROWAVE ASSOCIATES INC BURLINGTON MASS
Descriptive Note:
Quarterly progress rept. no. 7, 1 Jan-31 Mar 65,
Annotation:
High power semiconductor TR devices.
Pagination:
0048

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
DA36 039AMC03187E
Project Number(s):
1P6 22001A056
 Subject Terms
Joint Capability Areas:
JCA_6.1.3_Switching and Routing; JCA_6.1_Information Transport; JCA_6_Net Centric
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
(*SEMICONDUCTOR DIODES, RADAR DUPLEXERS), (*RADAR DUPLEXERS, SEMICONDUCTOR DIODES), X BAND, K BAND, ELECTRONIC SWITCHES, LIMITERS, ELECTRICAL IMPEDANCE, BANDWIDTH, VARACTOR DIODES, MICROWAVE EQUIPMENT, RADIOFREQUENCY POWER
Report Date:
1965 Mar 31