GAAS LASER DIODES.

Three different methods of junction formation were employed to obtain GaAs laser diodes for room temperature operation Diffusion of Zn into an n-type substrate under arsenic pressures of about 10 atmospheres, Deposition of an n-type layer onto a p-type substrate from a liquid Ga-melt, and Vapor epitaxial growth of an n-type layer onto a p-type substrate. The initial results of these measurements indicate that the high-pressure diffused junctions yield room-temperature laser diodes of a performance which is comparable to those in which the junction is grown by liquid solution epitaxy. Laser diodes in which the p-n junction had been formed by vapor phase epitaxy did not lase at room temperature. Author