RESEARCH ON SOLID STATE NOISE DEVICES.

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Abstract:

This report is concerned with an experimental investigation of a silicon noise diode having an avalanche breakdown voltage of approximately 12 volts and capable of producing high amplitude white noise over the frequency range 40 kc to 200 kc. The influence of the device parameters on the performance of completed devices from many independent diffusions is examined. A study of the design of a noise generator with high pulse rate is presented. Author

Author(s):
Farrington, David
Author Organization(s):
SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF
Descriptive Note:
Final rept. for 13 Jun 62-30 Jun 65,
Supplementary Note:
See also AD-607 231.
Annotation:
Research on solid state noise devices.
Pagination:
0057

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
DA49 186ORD1086
Project Number(s):
96395
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*SEMICONDUCTOR DEVICES, NOISE(RADIO)), (*AVALANCHE DIODES, NOISE GENERATORS), (*NOISE GENERATORS, AVALANCHE DIODES), SILICON, LOW FREQUENCY, VOLTAGE, PERFORMANCE(ENGINEERING)
Report Date:
1965 Jun 30