GAAS LASER DIODES.

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Abstract:

This report describes the device development work performed on GaAs injection lasers during the second quarter of the contract period. Particular emphasis was placed on increasing the external power efficiency of the diode laser. Studies of laser performance as a function of junction depth have also been made, with the junction being formed by Zn diffusion from the vapor phase. Two metallizing methods were tried to determine the influence of the surface treatment on laser performance. Twenty laser diodes fabricated by previouslydescribed techniques were delivered early in the report period. Author

Author(s):
Sehr, R. A.
Author Organization(s):
KORAD CORP SANTA MONICA CALIF
Descriptive Note:
Quarterly progress rept. no. 2, 1 Oct-31 Dec 64,
Annotation:
GaAs laser diodes.
Pagination:
0019

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
DA28 043AMC00235E
Project Number(s):
1P6 22001A056
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*LASERS, SEMICONDUCTOR DIODES), (*SEMICONDUCTOR DIODES, LASERS), (*GALLIUM ALLOYS, ARSENIC ALLOYS), SEMICONDUCTOR DEVICES, POWER, DIFFUSION, GOLD ALLOYS, POWDER ALLOYS, PROCESSING, PERFORMANCE(ENGINEERING)
Report Date:
1964 Dec 31