PHOTOLUMINESCENCE OF INDIUM ARSENIDE,

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Abstract:

The photoluminescence of InAs was studied at temperatures 77K, 4.2K, and 1.5K, in magnetic fields up to 30 kgauss. Samples were directly immersed in the coolant and were excited optically by using a pulsed high pressure mercury lamp. The emission was analysed by using a grating monochrometer and a p-type gold doped germanium photoconductive detector operating at 77K. All samples were polished and etched prior to measurement. Author

Author(s):
Mooradian, A. ; Fan, H. Y.
Author Organization(s):
PURDUE UNIV LAFAYETTE IND
Supplementary Note:
Pub. in Extrait des Comptes Rendus du Congres International (7th). Recombinaison Radiative dans les Semiconducteurs p39-6 1964 (Copies available only to DDC users).
Annotation:
Reprint: Photoluminescence of indium arsenide.
Pagination:
0009

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AROD-3655:19
Monitor Series:
3655:19
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*SEMICONDUCTORS, LUMINESCENCE), (*GALLIUM ALLOYS, ARSENIC ALLOYS), (*ARSENIC ALLOYS, LUMINESCENCE), (*LUMINESCENCE, SEMICONDUCTORS), PHOTOELECTRIC EFFECT, CRYOGENICS, MAGNETIC FIELDS, CONTINUOUS SPECTRA, IMPURITIES, EMISSIVITY
Keyword(s):
INDIUM ARSENIDE
Report Date:
1964 Jan 01