LOW NOISE L-BAND TRANSISTOR.

Progress is reported toward reaching the 3 db noise figure objective at a frequency of 1.3 Gc. Cut-off frequency and base resistance are now very close to the values required to meet the objectives. Technology has improved in areas of device geometry, evaporating impurity materials, and other doping techniques. Although serious questions had been raised about the adequacy of base contacts, these base contacts were studied and found adequate. Measuring techniques using the common emitter connection now indicate that noise figures at 1.3 Gc may be much better than earlier tests showed them to be. Measured in this way, a few of the devices submitted during the quarter probably would have been very close to 3 db at 1.3 Gc. Further improvements are anticipated. Author