ELECTRON TRANSIT IN AGBR AT 85 DEGREES K,

Some of the factors which can affect the transit of a pulse of electrons across a Bridgman AgBr crystal at 85 2 K were studied. The factors studied include the electron drift mobility mu, electron trapping, and electrode charge injection. A fast pulse 5 nanosec electron beam system was used for the excitation source. The value for mu, in substantial agreement with the work of Chollet and Rossel J. Helv. Phys. Acta. 33627 1960 Proc. of the International Conf. on Semiconductor Physics, Prague, 1960. Academic Press, 1961, p. 677, was found equal to 389 12 sq cmvsec. This value indicates that the scattering mechanism is primarily by longitudinal optical vibrations. Three different methods were used for determining mu 1 measuring the rise time of the integrated charge associated with the electron pulse motion, 2 measuring the duration of the electron current pulse, and 3 fitting the integrated charge to a uniform trapping theory. Agreement was obtained between the three methods. Evidence is presented for an electron emission process possibly caused by shallow trapping. No evidence for electrode charge injection was found. Author