HIGH POWER SEMICONDUCTOR TR DEVICES.

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Abstract:

The report covers work performed on both X sub Lband and K sub U-band phases. The effort on the contract has resulted in the delivery of K sub u band and S sub L band experimental models. These units were delivered according to contract specifications. Complete electrical data at high power and low level are given. Additional results are given for investigations of diodes and improved designs in both the K sub u and X sub L bands. Author

Author(s):
Brunton, R. H., Iii.
Author Organization(s):
MICROWAVE ASSOCIATES INC BURLINGTON MASS
Descriptive Note:
Quarterly progress rept. no. 6, 1 Oct-31 Dec 64,
Annotation:
High power semiconductor TR devices.
Pagination:
0041

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
DA36 039AMC03187E
Project Number(s):
1P6 22001A056
 Subject Terms
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*ELECTRONIC SWITCHES, TRANSMITTER RECEIVERS, SEMICONDUCTOR DIODES, LIMITERS, X BAND, K BAND, RADIOFREQUENCY POWER, VARACTOR DIODES, PERFORMANCE(ENGINEERING), MICROWAVE EQUIPMENT
Report Date:
1964 Dec 31